AFGHL40T65RQDN Datasheet - ON Semiconductor

AFGHL40T65RQDN - IGBT

AFGHL40T65RQDN Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operation

* High Current Capability

* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A

* 100% of the Parts Tested for ILM (Note 2)

* Hig

Datasheet Details

AFGHL40T65RQDN

328.70 KB

Igbt.

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