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AFGHL75T65SQD IGBT

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Description

Field Stop Trench IGBT 650 V, 75 A AFGHL75T65SQD Using the novel field stop 4th generation high speed IGBT technology.AFGHL75T65SQD which is AEC Q1.

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Features

* AEC
* Q101 Qualified
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ. ) @ IC = 75 A
* 100% of the Parts

Applications

* Automotive HEV
* EV Onboard Chargers
* Automotive HEV
* EV DC
* DC Converters
* Totem Pole Bridgeless PFC MAXIMUM RATINGS Rating Symbol Value Unit Collector
* to
* Emitter Voltage Gate
* to
* Emitter Voltage Transient Gate

AFGHL75T65SQD Distributors

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📌 All Tags

AFGHL75T65SQD IGBT ON Semiconductor
ON Semiconductor AFGHL75T65SQD-like datasheet
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AFGHL75T65SQDT
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