Datasheet4U.com

AFGHL30T65RQDN - IGBT

ON Semiconductor

📥 Download Datasheet

AFGHL30T65RQDN Datasheet Preview — Preview of AFGHL30T65RQDN PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	AFGHL30T65RQDN
Manufacturer	ON Semiconductor ↗
File Size	324.20 KB
Description	IGBT
Datasheet	AFGHL30T65RQDN-ONSemiconductor.pdf

AFGHL30T65RQDN Product details

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operation.
High Current Capability.
Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ. ) @ IC = 30 A.
100% of the Parts Tested for ILM (Note 2).
High Input Impedance.
Fast Switching.
Tightened Parameter Distribution.
This Device is Pb.
Free and RoHS Compliant Typical.

📁 AFGHL30T65RQDN Similar Datasheet

AFGBG70T65SQ - IGBT (onsemi)

Other Datasheets by ON Semiconductor

Published: Oct 3, 2022 |