AFGHL30T65RQDN Datasheet - ON Semiconductor

AFGHL30T65RQDN - IGBT

AFGHL30T65RQDN Features

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operation

* High Current Capability

* Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ IC = 30 A

* 100% of the Parts Tested for ILM (Note 2)

* Hi

Datasheet Details

AFGHL30T65RQDN

324.20 KB

Igbt.

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