* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operation
* High Current Capability
* Low Saturation Voltage: VCE(Sat) = 1.57 V (Typ.) @ IC = 30 A
* 100% of the Parts Tested for ILM (Note 2)
* Hi
AFGHL30T65RQDN Datasheet (324.20 KB)
AFGHL30T65RQDN
324.20 KB
Igbt.
IGBT for Automotive Application 650 V, 30 A AFGHL30T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum .
📁 Related Datasheet
AFGHL25T120RHD IGBT (ON Semiconductor)
AFGHL25T120RLD IGBT (ON Semiconductor)
AFGHL40T120RHD IGBT (ON Semiconductor)
AFGHL40T65RQDN IGBT (ON Semiconductor)
AFGHL40T65SPD IGBT (ON Semiconductor)
AFGHL40T65SQ IGBT (ON Semiconductor)
AFGHL40T65SQD IGBT (ON Semiconductor)
AFGHL50T65RQDN IGBT (ON Semiconductor)
AFGHL50T65SQ IGBT (ON Semiconductor)
AFGHL50T65SQD IGBT (ON Semiconductor)
