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BC558B - PNP Epitaxial Silicon Transistor

Download the BC558B datasheet PDF. This datasheet also covers the BC559 variant, as both devices belong to the same pnp epitaxial silicon transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Switching and Amplifier.
  • High.
  • Voltage: BC556, VCEO =.
  • 65 V.
  • Low.
  • Noise: BC559, BC560.
  • Complement to BC546, BC547, BC548, BC549, and BC550.
  • These Devices are Pb.
  • Free, Halogen Free/BFR Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BC559-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BC558B
Manufacturer onsemi
File Size 247.16 KB
Description PNP Epitaxial Silicon Transistor
Datasheet download datasheet BC558B Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PNP Epitaxial Silicon Transistor BC556, BC557, BC558, BC559, BC560 Features • Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Current (Pulse) IBP −200 mA Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to
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