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PNP Epitaxial Silicon Transistor
BC556, BC557, BC558, BC559, BC560
Features
• Switching and Amplifier • High−Voltage: BC556, VCEO = −65 V • Low−Noise: BC559, BC560 • Complement to BC546, BC547, BC548, BC549, and BC550 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Collector - Base Voltage
VCBO
V
BC556
−80
BC557 / BC560
−50
BC558 / BC559
−30
Collector - Emitter Voltage
VCEO
V
BC556
−65
BC557 / BC560
−45
BC558 / BC559
−30
Emitter - Base Voltage
VEBO
−5
V
Collector Current (DC)
IC
−100
mA
Peak Collector Current (Pulse)
ICP
−200
mA
Peak Base Current (Pulse)
IBP
−200
mA
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG −65 to