SeCoS Halbleitertechnologie GmbH BC558B
PNP Transistor
| Part No. | BC558B |
|---|---|
| Datasheet | BC558B Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
PNP Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 Power dissipation PCM: Collector current ICM: Collector-base voltage VCBO: 0.625 W (Tamb=25℃) - 0.1 A BC556 BC557 BC558 -80 -50 -30 V V V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1 2 3 1 23 1. COLLECTOR 2. BASE 3. EMITTERELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage Collector-emitter breakdown voltage BC556 BC557 BC558 BC556 BC557 BC558 VCBO Ic= -100µA , IE=0 VCEO = - 2mA, IB=0 Emitter-base breakdown voltage VEBO IE= -100µA, IC=0 Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC556 BC557 BC558 BC557A/558A BC556B/BC557B/BC558B BC556C/BC557C/BC558C Collector-emitter saturation voltage ICBO ICEO IEBO hFE(1) VCE(sat) VCB= -70V, IE=0 VCB= -45 V, IE=0 VCB= -25V, IE=0 VCE= -60 V, I...
