onsemi BC558B
PNP Epitaxial Silicon Transistor
| Part No. | BC558B |
|---|---|
| Datasheet | BC558B Download |
| Manufacturer |  onsemi |
| Description | PNP Epitaxial Silicon Transistor |
| Buy | Stock & Price |
FEATURES
● Switching and Amplifier● High−Voltage: BC556, VCEO = −65 V
● Low−Noise: BC559, BC560
● Complement to BC546, BC547, BC548, BC549, and BC550
● These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collector - Base Voltage VCBO V BC556 −80 BC557 / BC560 −50 BC558 / BC559 −30 Collector - Emitter Voltage VCEO V BC556 −65 BC557 / BC560 −45 BC558 / BC559 −30 Emitter - Base Voltage VEBO −5 V Collector Current (DC) IC −100 mA Peak Collector Current (Pulse) ICP −200 mA Peak Base Current (Pulse) IBP −200 mA Junction Temperature TJ 150 °C Storage Temperature Range TSTG −65 to +150 °C Stresses exceeding those listed in theMAXIMUM RATINGS
table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Note 1) (TA = 25°C unless otherwise noted) Parameter Symbol Max.
