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BD234G - Plastic Medium Power Bipolar PNP Transistors

This page provides the datasheet information for the BD234G, a member of the BD237G Plastic Medium Power Bipolar PNP Transistors family.

Datasheet Summary

Features

  • High DC Current Gain.
  • Epoxy Meets UL 94 V0 @ 0.125 in.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – BD234G

Datasheet Details

Part number BD234G
Manufacturer ON Semiconductor
File Size 162.92 KB
Description Plastic Medium Power Bipolar PNP Transistors
Datasheet download datasheet BD234G Datasheet
Additional preview pages of the BD234G datasheet.

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Other Datasheets by ON Semiconductor
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  • BD237 - Transistor
  • BD237G - Plastic Medium Power Bipolar NPN Transistors
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Full PDF Text Transcription

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Plastic Medium Power Bipolar Transistors BD237G (NPN), BD234G (PNP) Designed for use in 5.0 to 10 W audio amplifiers and drivers utilizing complementary or quasi complementary circuits. Features • High DC Current Gain • Epoxy Meets UL 94 V0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD234G DB237G, BD238G VCEO Vdc 45 80 Collector−Base Voltage BD234G DB237G, BD238G VCBO Vdc 60 100 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25_C Operating and Storage Junction Temperature Range VEBO 5.0 Vdc IC 2.0 Adc IB 1.
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