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BD232 - NPN Transistor

Datasheet Summary

Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

in TV receivers.

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Datasheet Details

Part number BD232
Manufacturer INCHANGE
File Size 201.66 KB
Description NPN Transistor
Datasheet download datasheet BD232 Datasheet
Additional preview pages of the BD232 datasheet.

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Full PDF Text Transcription

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isc Silicon NPN Power Transistor BD232 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power output stages and line driver in TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.
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