BD232 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BD232 .
Good Linearity of hFE. High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Minimum Lot-to-Lot variations for robust device p.

📥 Download Datasheet

BD232 Datasheet Preview — Preview of BD232 PDF

Datasheet Specifications

Part number: BD232
Manufacturer: INCHANGE
File Size: 201.66 KB
Datasheet: BD232-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in power output stages and line driver in TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.5 A

BD232 Distributors

📁 Related Datasheet

BD2327N50100AHF BD230 BD231 BD2310G BD233 BD234

📌 All Tags

BD232 NPN Transistor INCHANGE

INCHANGE BD232-like datasheet