DC Current Gain -hFE = 40(Min)@ IC= 0.2A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C
Complement to Type BD240/A/B/C
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
AP
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isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD239; 60V(Min)- BD239A 80V(Min)- BD239B; 100V(Min)- BD239C
·Complement to Type BD240/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching applications.
BD239 Datasheet
