BD232 - NPN Transistor

Inchange Semiconductor

General Description

Good Linearity of hFE High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

in TV receivers.

📥 Download Datasheet

BD232 npn transistor by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	BD232
Manufacturer	Inchange Semiconductor
File Size	201.66 KB
Description	NPN Transistor
Datasheet	BD232 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BD2327N50100AHF	Ultra Low Profile 0404 Balun	Anaren
BD230	NPN power transistor	NXP
BD230	SILICON POWER TRANSISTOR	SavantIC
BD231	PNP power transistor	NXP
BD231	SILICON POWER TRANSISTOR	SavantIC

Other Datasheets by Inchange Semiconductor

Part Number	Description
BD230	Silicon NPN Power Transistor
BD231	PNP Transistor
BD239	NPN Transistor
BD239A	NPN Transistor
BD239B	NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc Silicon NPN Power Transistor BD232 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power output stages and line driver in TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 0.