BD232 Overview
·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power output stages and line driver in TV receivers. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)...