NXP Semiconductors BD231
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BD231 |
|---|---|
| Datasheet | BD231 Download |
| Manufacturer |  NXP Semiconductors |
| Description | PNP power transistor |
| Buy | Stock & Price |
FEATURES
● High current (max. 1.5 A)● Low voltage (max. 80 V).
APPLICATIONS
● Driver stages in television circuits.DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD230. handbook, halfpage BD231 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface baseDESCRIPTION
2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb ≤ 62 °C CONDITIONS open emitter open base open collector − − − − − − − −65 − −65 MIN. MAX. −100 −80 −5 −1.5 −3 −1 12.5 +150 150 +150 V V V A A A W °C °C °C UNIT 1999 Apr 21 2 Philips Semiconductors Product specification PNP power transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1.
