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BD231 - PNP power transistor

General Description

PNP power transistor in a TO-126; SOT32 plastic package.

NPN complement: BD230.

Simplified outline (TO-126; SOT32) and symbol.

Key Features

  • High current (max. 1.5 A).
  • Low voltage (max. 80 V).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD231 PNP power transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 21 Philips Semiconductors Product specification PNP power transistor FEATURES • High current (max. 1.5 A) • Low voltage (max. 80 V). APPLICATIONS • Driver stages in television circuits. DESCRIPTION PNP power transistor in a TO-126; SOT32 plastic package. NPN complement: BD230. handbook, halfpage BD231 PINNING PIN 1 2 3 emitter collector, connected to metal part of mounting surface base DESCRIPTION 2 3 1 1 2 3 Top view MAM272 Fig.1 Simplified outline (TO-126; SOT32) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).