Inchange Semiconductor BD231
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | BD231 |
|---|---|
| Datasheet | BD231 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | PNP Transistor |
| Buy | Stock & Price |
DESCRIPTION
●DC Current Gain- : hFE= 40(Min)@ IC= -0.15A●Complement to Type BD226/228/230
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for use in driver stages in television circuits.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE BD227 -45 VCBO Collector-Base Voltage BD229 -60 BD231 -100 BD227 -45 VCEO Collector-Emitter Voltage BD229 -60 BD231 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD227 BD229 BD231 -45 -60 -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature -3.0 12.5 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD227/229/231 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARAC...