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BD231 - PNP Transistor

This page provides the datasheet information for the BD231, a member of the BD227 PNP Transistor family.

Datasheet Summary

Description

DC Current Gain- : hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Designed for use in driver stages in television circuits.

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Datasheet preview – BD231

Datasheet Details

Part number BD231
Manufacturer INCHANGE
File Size 206.33 KB
Description PNP Transistor
Datasheet download datasheet BD231 Datasheet
Additional preview pages of the BD231 datasheet.

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Full PDF Text Transcription

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD227 -45 VCBO Collector-Base Voltage BD229 -60 BD231 -100 BD227 -45 VCEO Collector-Emitter Voltage BD229 -60 BD231 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD227 BD229 BD231 -45 -60 -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature -3.0 12.
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