STMicroelectronics BD236
The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively.| Part No. | BD236 |
|---|---|
| Datasheet | BD236 Download |
| Manufacturer |  STMicroelectronics |
| Description | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
DESCRIPTION
3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CER V CEO V EBO IC I CM P t ot T stg Tj Collector-Base Voltage (IE = 0) Collector-Base Voltage (R BE = 1K Ω) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value BD235 BD236 60 60 60 5 2 6 25 -65 to 150 150 BD237 BD238 100 100 80 Uni t V V V V A A W o o C C For PNP types voltage and current values are negative. September 1997 1/5 BD235/BD236/BD237/BD238 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 5 o C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symb ol I CBO I EBO Parameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = rated V CEO V EB = 5 V I C = 100 mA for BD235/BD236 for BD237/BD238 IC = 1 A IC = 1 A I C = 150 mA IC = 1 A I C = 250 mA I C = 150 mA IB = 0.1 A V CE = 2 V VCE = 2 V V CE = 2 V VCE = 10 V VCE = 2 V 40 25 3 1.6 MHz Tc = 150 C o Min.
