Datasheet Details
| Part number | BD236 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 413.70 KB |
| Description | SILICON PNP POWER TRANSISTORS |
| Datasheet | BD236 BD234 Datasheet (PDF) |
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Overview: BD234 BD236 BD238 SILICON PNP POWER TRANSISTORS w w w. c e n t r a l s e m i .
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BD236 |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 413.70 KB |
| Description | SILICON PNP POWER TRANSISTORS |
| Datasheet | BD236 BD234 Datasheet (PDF) |
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: The CENTRAL SEMICONDUCTOR BD234, BD236, and BD238 are silicon PNP power transistors designed for medium power amplifier and switching applications.
MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Peak Collector Current ICM Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg BD234 45 45 45 BD236 60 60 60 5.0 2.0 6.0 25 -65 to +150 BD238 100 100 80 ELECTRICAL CHARACTERISTICS: (TC=25°C) SYMBOL TEST CONDITIONS ICBO VCB=Rated VCBO IEBO VEB=5.0V BVCEO IC=100mA VCE(SAT) IC=1.0A, IB=100mA VBE(ON) VCE=2.0V, IC=1.0A hFE VCE=2.0V, IC=150mA hFE VCE=2.0V, IC=1.0A fT VCE=10V, IC=250mA BD234 MIN MAX - 100 - 1.0 45 - 0.6 - 1.3 40 25 3.0 - BD236
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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BD236 | COMPLEMENTARY SILICON POWER TRANSISTORS | STMicroelectronics |
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BD236 | PNP Transistor | Fairchild Semiconductor |
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BD236 | Silicon PNP Transistor | Toshiba |
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BD236 | EPITAXIAL SILICON POWER TRANSISTORS | CDIL |
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BD236 | Silicon PNP Power Transistor | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| BD234 | SILICON PNP POWER TRANSISTORS |
| BD238 | SILICON PNP POWER TRANSISTORS |