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BSR16 PNP Epitaxial Silicon Transistor

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Description

PNP Epitaxial Silicon Transistor BSR16 PNP General Purpose Amplifier * This Device Designed for Use as General Purpose Amplifier and Switches.
98ASB42226B Electronic versions are uncontrolled except when accessed directly from the Document Repository.

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Applications

* involving pulsed or low duty cycle operations. THERMAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) Symbol Parameter Max. PD Total Device Dissipation 350 Derate above 25_C 2.8 RθJA Thermal Resistance, Junction to 357 Ambient 3. Device mounted on FR
* 4 PCB 40 mm × 40 mm

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