BSR57 Datasheet - ON Semiconductor

BSR57 N-Channel JFET Low-Frequency Low-Noise Amplifier

N-Channel JFET Low-Frequency Low-Noise Amplifier BSR57 This device is designed for low power chopper or switching application sourced from process 51 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain Gate Voltage Gate Source Voltage VDGO VGSO 40 V 40 V Forward Gate Current Total Power Dissipation Up to Tamb = 40°C IGF 50 mA Ptot 250 mW Storage Temperature Range TSTG 55 to +150 °C.

BSR57 Features

* availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or inc

BSR57-ONSemiconductor.pdf