BSR57 Datasheet - ON Semiconductor

BSR57 N-Channel JFET Low-Frequency Low-Noise Amplifier

N-Channel JFET Low-Frequency Low-Noise Amplifier BSR57 This device is designed for low power chopper or switching application sourced from process 51 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain Gate Voltage Gate Source Voltage VDGO VGSO 40 V 40 V Forward Gate Current Total Power Dissipation Up to Tamb = 40°C IGF 50 mA Ptot 250 mW Storage Temperature Range TSTG 55 to +150 °C.

BSR57 Features

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BSR57 Datasheet (89.65 KB)