BSR50 - NPN Darlington Transistor
BSR50 BSR50 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 0.5A.
Sourced from Process 06.
1 TO-92 1.
Emitter 2.
Collector 3.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 45 60 5 1.5 -55 ~ 150 Un
