NXP Semiconductors BSR13
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later.| Part No. | BSR13 |
|---|---|
| Datasheet | BSR13 Download |
| Manufacturer |  NXP Semiconductors |
| Description | NPN switching transistors |
| Buy | Stock & Price |
FEATURES
● High current (max. 800 mA)● Low voltage (max. 40 V).
APPLICATIONS
● Switching and linear applications.DESCRIPTION
NPN switching transistor in a SOT23 plastic package. PNP complements: BSR15 and BSR16. MARKING TYPE NUMBER BSR13 BSR14 Note 1. ∗ = p : Made in Hong Kong. ∗ = t : Made in Malaysia. MARKING CODE(1) U7∗ U8∗ Top view handbook, halfpage BSR13; BSR14 PINNING PIN 1 2 3 base emitter collectorDESCRIPTION
3 3 1 2 1 2 MAM255 Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSR13 BSR14 VCEO collector-emitter voltage BSR13 BSR14 VEBO emitter-base voltage BSR13 BSR14 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector − − − − − − −65 − −65 5 6 800 800 200 250 +150 150 +150 V V mA mA mA mW °C °C °C open base − − 30 40 V V PARAMETER collector-base voltage CONDITIONS open emitter − − 60 75 V V MIN.
