BSR58 Datasheet | NXP Semiconductors

BSR56; BSR57; BSR58 N-channel FETs Rev. 3 - 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. 1.2 Features and benefits - Interchangeable drain and source connections - Small package 1.3 Applications - Low-power, chopper or switching applications - Thick and thin-film circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source...