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BSR58 - N-channel FETs

General Description

Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits.

The transistors are intended for low-power, chopper or switching applications in industrial service.

Key Features

  • Interchangeable drain and source connections.
  • Small package 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BSR56; BSR57; BSR58 N-channel FETs Rev. 3 — 25 June 2014 Product data sheet 1. Product profile 1.1 General description Symmetrical silicon N-channel depletion type junction field-effect transistors (FETs) in a plastic microminiature envelope designed for application in thick and thin-film circuits. The transistors are intended for low-power, chopper or switching applications in industrial service. 1.2 Features and benefits  Interchangeable drain and source connections  Small package 1.3 Applications  Low-power, chopper or switching applications  Thick and thin-film circuits 1.4 Quick reference data Table 1.