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BSR50 - NPN Darlington Transistor

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BSR50 BSR50 NPN Darlington Transistor • This device designed for applications requiring extremely high gain at collector currents to 0.5A. • Sourced from Process 06. 1 TO-92 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, TSTG Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Storage Temperature Ratings 45 60 5 1.