BSR50 Description
BSR50 BSR50 NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 0.5A. Units V V V nA nA Thermal Characteristics TA=25°C unless otherwise noted Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C , Junction to Case , Junction to Ambient Max. 625 5.0 83.3 200 Units mW mW/°C °C/W °C/W ©2002 Fairchild Semiconductor Corporation Rev.