BUV21 Datasheet - ON Semiconductor

BUV21 NPN Silicon Power Transistor

BUV21 Features

* High DC Current Gain: hFE min = 20 at IC = 12 A

* Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A

* Very Fast Switching Times: TF max = 0.4 ms at IC = 25 A

* These are Pb

* Free Devices

* MAXIMUM RATINGS Rating Collector

* Emitter Voltage Collector

Datasheet Details

BUV21

108.83 KB

Npn silicon power transistor.

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