CNY171M - Phototransistor Optocouplers

ON Semiconductor

CNY171M Datasheet Preview — Preview of CNY171M PDF

Datasheet Details

Part number	CNY171M
Manufacturer	ON Semiconductor ↗
File Size	367.63 KB
Description	Phototransistor Optocouplers
Datasheet	CNY171M-ONSemiconductor.pdf

CNY171M Product details

Description

The CNY17XM, CNY17FXM, and MOC8106M devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in line package.

Features

High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M).
Closely Matched Current Transfer Ratio (CTR) Minimizes Unit.
to.
Unit Variation.
Current Transfer Ratio In Select Groups.
Very Low Coupled Capacitance Along With No Chip.
to.
Pin 6 Base Connection for Minimum Noise Susceptibility (CNY17FXM, MOC8106M).
Safety and Regulatory Approvals:  UL1577, 4,170 VACRMS for 1 Minute  DIN.
EN/IEC60747.
5.
5, 850 V Peak Working Ins.

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Published: Sep 13, 2022 |