CPH3106 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base C.

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Published: Jan 30, 2016 |