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CPH6001A - RF Transistor

Datasheet Summary

Features

  • High gain : |S21e|2=11dB typ (f=1GHz).
  • High cut-off frequency : fT=6.7GHz typ.
  • Small and slim 6-pin package.
  • Large allowable collector dissipation (800mW max) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic su.

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Datasheet Details

Part number CPH6001A
Manufacturer ON Semiconductor
File Size 375.58 KB
Description RF Transistor
Datasheet download datasheet CPH6001A Datasheet
Additional preview pages of the CPH6001A datasheet.

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Full PDF Text Transcription

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Ordering number : ENA1079A CPH6001A RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single CPH6 http://onsemi.com Features • High gain : |S21e|2=11dB typ (f=1GHz) • High cut-off frequency : fT=6.7GHz typ • Small and slim 6-pin package • Large allowable collector dissipation (800mW max) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 12 2 100 800 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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