CPH6121 - Bipolar Transistor

ON Semiconductor

Datasheet Details

Adoption of MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High speed switching.
Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm).
High allowable power dissipation Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current C.

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Published: Jan 30, 2016 |