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CPH6003A - RF Transistor

Datasheet Summary

Features

  • High gain (fT=7GHz typ).
  • High Current (IC=150mA).
  • Ultraminiature and thin 6pin package.
  • Large Collector Disspation (800mW) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 12 2 1.

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Datasheet Details

Part number CPH6003A
Manufacturer ON Semiconductor
File Size 395.02 KB
Description RF Transistor
Datasheet download datasheet CPH6003A Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1078A CPH6003A RF Transistor 12V, 150mA, fT=7GHz, NPN Single CPH6 http://onsemi.com Features • High gain (fT=7GHz typ) • High Current (IC=150mA) • Ultraminiature and thin 6pin package • Large Collector Disspation (800mW) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 20 12 2 150 800 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
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