CPH6314 - P-Channel Silicon MOSFET

Datasheet Summary

Features

Low ON-resistance.
High-speed switching.
4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device.

ON Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	CPH6314
Manufacturer	ON Semiconductor
File Size	94.31 KB
Description	P-Channel Silicon MOSFET
Datasheet	CPH6314 Datasheet
Additional preview pages of the CPH6314 datasheet.

📁 Similar Datasheet

CPH6314 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
CPH6311 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
CPH6312 - High-Speed Switching Applications (Sanyo Semicon Device)
CPH6313 - High-Speed Switching Applications (Sanyo Semicon Device)
CPH6315 - High-Speed Switching Applications (Sanyo Semicon Device)
CPH6316 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
CPH6318 - High-Speed Switching Applications (Sanyo Semicon Device)
CPH6301 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
CPH6302 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)
CPH6306 - Ultrahigh-Speed Switching Applications (Sanyo Semicon Device)

Other Datasheets by ON Semiconductor

CPH6337 - Power MOSFET
CPH6347 - Power MOSFET
CPH6350 - P-Channel Power MOSFET
CPH6354 - Power MOSFET
CPH6355 - Power MOSFET
CPH6001A - RF Transistor
CPH6003A - RF Transistor
CPH6020 - RF Transistor

Full PDF Text Transcription

Click to expand full text

CPH6314 Ordering number : ENN8236 CPH6314 Features • Low ON-resistance. • High-speed switching. • 4V drive. P-Channel Silicon MOSFET General-Purpose Switching Device Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Ratings --30 ±20 --4 --16 1.

Published: Nov 4, 2019 |