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CPH6306 - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit:mm 2151A [CPH6306] 0.2 0.05 2.9 6 5 4 0.15 0.6 1 2 3 0.95 0.6 1.6 2.8 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) w.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN6348 P-Channel Silicon MOSFET CPH6306 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2151A [CPH6306] 0.2 0.05 2.9 6 5 4 0.15 0.6 1 2 3 0.95 0.6 1.6 2.8 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2×0.8mm) www.DataSheet4U.com 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Conditions 0.7 0.9 0.2 Ratings –60 ±20 –1.8 –7.2 1.