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CPH6301 - Ultrahigh-Speed Switching Applications

Key Features

  • Adoption of FBET, MBIT processes.
  • High current capacitance.
  • Low collector-to-emitter saturation voltage.
  • High-speed switching.
  • Ultrasmall package permitting applied sets to be made small and slim (0.9mm).
  • High allowable power dissipation. 0.05 1.6 2.8 1 2 ( ) : CPH6102 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:ENN5810 PNP/NPN Epitaxial Planar Silicon Transistors CPH6102/CPH6202 High-Current Switching Applications Applications · DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2146A [CPH6102/6202] 2.9 6 5 4 0.6 Features · Adoption of FBET, MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package permitting applied sets to be made small and slim (0.9mm). · High allowable power dissipation. 0.05 1.6 2.8 1 2 ( ) : CPH6102 0.