CPH6020 - RF Transistor

onsemi

Key Features

Low-noise use : NF=1.2dB typ (f=1GHz).
High cut-off frequency : fT=16GHz typ (VCE=5V).
High gain : |S21e|2=13.5dB typ (f=1GHz) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 15 8.

CPH6020 rf transistor by onsemi - Datasheet Preview

Datasheet Details

Part number	CPH6020
Manufacturer	onsemi
File Size	394.04 KB
Description	RF Transistor
Datasheet	CPH6020 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA1548A CPH6020 RF Transistor 8V, 150mA, fT=16GHz, NPN Single CPH6 http://onsemi.com Features • Low-noise use : NF=1.2dB typ (f=1GHz) • High cut-off frequency : fT=16GHz typ (VCE=5V) • High gain : |S21e|2=13.5dB typ (f=1GHz) Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to- Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature VCBO VCEO VEBO IC PC Tj Storage Temperature Tstg Conditions When mounted on ceramic substrate (250mm2×0.8mm) Ratings 15 8 2 150 700 150 --55 to +150 Unit V V V mA mW °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.