DBD250G Datasheet - ON Semiconductor

DBD250G 25.0A Single-Phase Bridge Rectifier

DBD250G Features

* Plastic molded structure

* Glass passivation for high reliability

* Peak reverse voltage : VRM=600V

* Average output current : IO=25.0A Specifications Absolute Maximum Ratings at Tc=25°C Parameter Peak Reverse Voltage Symbol VRM Average Output Curre

Datasheet Details

DBD250G

284.76 KB

25.0a single-phase bridge rectifier.

📁 Related Datasheet

DBD10 1.0A Single-Phase Bridge Rectifier (Sanyo Semicon Device)

DBD10G 1.0A Single-Phase Bridge Rectifier (ON Semiconductor)

DB-2933-54 RF POWER amplifier using 2 x SD2933 N-Channel enhancement-mode lateral MOSFETs (STMicroelectronics)

DB-3 Silicon Bidirectional DIAC (Semtech Corporation)

DB-4 Bi-directional trigger diodes (Leshan Radio Company)

DB-499D-470 RF power amplifier using 1 x START499D NPN RF silicon transistor (ST Microelectronics)

DB-54003-470 RF POWER amplifier using 1 x PD54003 N-Channel enhancement-mode lateral MOSFETs (STMicroelectronics)

DB-54003-470 HF to 2000 MHz Class AB Common Source (ETC)

TAGS

DBD250G Distributor