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EB201 High Cell Density MOSFET

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Description

www.DataSheet4U.com EB201/D High Cell Density MOSFETs Low On *Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON.

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Features

* 5.5 A. 3. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max. 4. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C,

Applications

* may be able to move from larger to smaller packages, which cuts the cost of the package and decreases the required heatsink or circuit board area. A good example of this is the 14 mΩ TO
* 247. Until very recently, the only way to achieve such low on
* resistance was to build a large die

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EB201 High Cell Density MOSFET ON Semiconductor
ON Semiconductor EB201-like datasheet
EB201D