EB201 Datasheet - ON Semiconductor

EB201 High Cell Density MOSFET

www.DataSheet4U.com EB201/D High Cell Density MOSFETs Low On Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire. Today a sub 10 mΩ power MOSFET is not only available, it is housed in a standard TO 220. Such are the advances that have occurred la.

EB201 Features

* 5.5 A. 3. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max. 4. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C,

EB201_ONSemiconductor.pdf