Datasheet Details
Part number:
EB201D, EB201
Manufacturer:
File Size:
148.26 KB
Description:
High Cell Density MOSFET
Note:
This datasheet PDF includes multiple part numbers: EB201D, EB201.
Please refer to the document for exact specifications by model.
Features
* 5.5 A. 3. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C, Tboard = 125°C max. 4. Largest die available in a DPAK, RΘJC = 3.12°C/W, RΘCA = 50°C/W, Tamb = 85°C,
EB201D, EB201, High Cell Density MOSFET
www.DataSheet4U.com EB201/D High Cell Density MOSFETs Low On Resistance Affords New Design Options Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.com ENGINEERING BULLETIN Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream.
After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire.
Today a sub 10 mΩ power MOSFET is not only available, it is housed in a standard TO 220.
Such are the advances that have occurred la
EB201D Distributor
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