ECH8410 - N-Channel Power MOSFET

ON Semiconductor

Datasheet Details

Low ON-resistance.
4V drive.
Halogen free compliance.
Protection diode in Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings 30 ±20 12 60 1.6 150 --55 to +150 Un.

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Published: Oct 31, 2015 |