ESDL2011 Datasheet - ON Semiconductor

ESDL2011 ESD Protection Diode

of survivability specs.  Semiconductor Components Industries, LLC, 2017 1 February, 2024 * Rev. 3 Publication Order Number: ESDL2011/D ESDL2011 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter I IPP IPP Maximum Reverse Peak Pulse Current VC Clampin.

DATA SHEET www.onsemi.com ESD Protection Diode Micro Packaged Diodes for ESD Protection ESDL2011 The ESDL2011 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, the part is well suited for use in high speed data line .

ESDL2011 Features

* Low Capacitance 0.17 pF (Typ)

* Low Clamping Voltage

* Small Body Outline Dimensions: 0.60 mm x 0.30 mm

* Low Body Height: 0.2 mm

* Stand

* off Voltage: 1.0 V

* IEC61000

* 4

* 2 Level 4 ESD Protection

* These Devices are Pb

* Free, Halogen Free/B