FCH190N65F Datasheet - ON Semiconductor

N-Channel MOSFET

FCH190N65F Features

* 700 V @ TJ = 150°C

* Typ. RDS(on) = 168 mΩ

* Ultra Low Gate Charge (Typ. Qg = 60 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF)

* 100% Avalanche Tested

* RoHS Compliant Applications

* LCD / LED / PDP TV

* Telecom /

FCH190N65F General Description

SuperFET® II MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching perf.

FCH190N65F Datasheet (1.67 MB)