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FDB035N10A N-Channel MOSFET

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Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 214 A, 3.5 mW FDB035N10A .
This N. Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on. state resistanc.

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Features

* RDS(on) = 3.0 mW ( Typ. ) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 89 nC ( Typ. )
* High Performance Trench Technology for Extremely Low RDS(on)
* High Power and Current Handling Capability

Applications

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and Uninterruptible Power Supplies
* Micro Solar Inverter DATA SHEET www. onsemi. com VDSS RDS(ON) MAX ID MAX 100 V 3.5 mW @ 10 V 214 A
* Calculated co

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FDB035N10A N-Channel MOSFET ON Semiconductor
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