FDB035N10A - N-Channel MOSFET

onsemi

Datasheet Details

Part number	FDB035N10A
Manufacturer	onsemi
File Size	467.77 KB
Description	N-Channel MOSFET
Datasheet	FDB035N10A Datasheet

General Description

This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance.

Overview

MOSFET – N-Channel, POWERTRENCH) 100 V, 214 A, 3.5 mW FDB035N10A.

Key Features

RDS(on) = 3.0 mW ( Typ. ) @ VGS = 10 V, ID = 75 A.
Fast Switching Speed.
Low Gate Charge, QG = 89 nC ( Typ. ).
High Performance Trench Technology for Extremely Low RDS(on).
High Power and Current Handling Capability.
RoHS Compliant.

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