FDB035N10A Datasheet, Mosfet, ON Semiconductor

FDB035N10A Features

• Mosfet
• RDS(on) = 3.0 mW ( Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge, QG = 89 nC ( Typ.)
• High Performance Trench Technology for

PDF File Details

Part number:

FDB035N10A

Manufacturer:

ON Semiconductor ↗

File Size:

467.77kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This N

Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on

FDB035N10A Application

• Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Unin

TAGS

FDB035N10A

ON Semiconductor

📁 Related Datasheet

FDB035N10A - N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 Features • RDS(on) = 3.0 mΩ .

FDB035AN06A0 - N-Channel MOSFET (Fairchild Semiconductor)
FDB035AN06A0 July 2002 FDB035AN06A0 N-Channel PowerTrench® MOSFET 60V, 80A, 3.5mΩ Features • r DS(ON) = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot).

FDB035AN06A0 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor FDB035AN06A0 ·FEATURES ·With TO-263(D2PAK) packaging ·Single pulse and repetitive pulse ·High.

FDB035AN06A0 - N-Channel MOSFET (ON Semiconductor)
FDB035AN06A0 — N-Channel PowerTrench® MOSFET FDB035AN06A0 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ Features • RDS(on) = 3.2 mΩ ( Typ.) @ VG.

FDB031N08 - N-Channel MOSFET (Fairchild Semiconductor)
FDB031N08 — N-Channel PowerTrench® MOSFET FDB031N08 N-Channel PowerTrench® MOSFET 75 V, 235 A, 3.1 mΩ November 2013 Features • RDS(on) = 2.4 mΩ (Ty.

FDB039N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB039N06 N-Channel PowerTrench® MOSFET July 2009 FDB039N06 N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ Features • RDS(on) = 2.95mΩ ( Typ.) @ VG.

FDB016N04AL7 - N-Channel MOSFET (Fairchild Semiconductor)
FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features • RDS(on) = 1.16 mW (T.

FDB024N04AL7 - MOSFET (Fairchild Semiconductor)
FDB024N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N04AL7 N-Channel PowerTrench® MOSFET 40 V, 219 A, 2.4 mΩ Features • RDS(on) = 2.0 mΩ (Ty.

FDB024N06 - N-Channel MOSFET (Fairchild Semiconductor)
FDB024N06 — N-Channel PowerTrench® MOSFET FDB024N06 N-Channel PowerTrench® MOSFET 60 V, 265 A, 2.4 mΩ November 2013 Features • RDS(on) = 1.8 mΩ (Ty.

FDB024N08BL7 - MOSFET (Fairchild Semiconductor)
FDB024N08BL7 N-Channel PowerTrench® MOSFET June 2014 FDB024N08BL7 N-Channel PowerTrench® MOSFET 80 V, 229 A, 2.4 mΩ Features • RDS(on) = 1.7 mΩ ( T.