FDB8896-F085 Datasheet | onsemi

FDB8896-F085 N-Channel PowerTrench® MOSFET N-Channel PowerTrench® MOSFET 30V, 93A, 5.7mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications - DC/DC converters Features - rDS(ON) = 5.7mΩ, VGS = 10V, ID = 35A - rDS(ON) = 6.8mΩ, VGS = 4.5V, ID = 35A - High performance trench technology for extremely low rDS(ON) - Low gate charge - High power and current handling capability - Qualified to AEC Q101 - RoHS pliant GATE SOURCE TO-263AB...