FDD10AN06A0 Datasheet - ON Semiconductor

FDD10AN06A0 N-Channel MOSFET

FDD10AN06A0 Features

* RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A

* Qg(tot) = 28 nC (Typ.), VGS = 10 V

* Low Miller Charge

* Low Qrr Body Diode

* UIS Capability (Single Pulse and Repetitive Pulse)

* This Device is Pb

* Free, Halide Free and is RoHS Compliant Appl

Datasheet Details

FDD10AN06A0

388.30 KB

N-channel mosfet.

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