FDD10AN06A0
Features
- RDS(on) = 9.4 m W (Typ.), VGS = 10 V, ID = 50 A
- Qg(tot) = 28 n C (Typ.), VGS = 10 V
- Low Miller Charge
- Low Qrr Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- Motor / Body Load Control
- ABS Systems
- Powertrain Management
- Injection Systems
- DC- DC Converters and Off- line UPS
- Distributed Power Architectures and VRMs
- Primary Switch for 12 V and 24 V Systems
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDSS VGS ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (TC < 115°C, VGS = 10 V) Continuous (Tamb = 25°C, VGS = 10 V,
Rq JA = 52°C/W) Pulsed
±20
A 50 11
Figure 4
EAS Single Pulse Avalanche Energy (Note 1) PD Power Dissipation
Derate above 25°C
429 m J
W/°C
TJ, TSTG Operating and Storage Temperature
- 55 to 175 °C
Stresses exceeding those listed in the Maximum Ratings table may...
