FDD10AN06A0 - N-Channel MOSFET
FDD10AN06A0 Features
* RDS(on) = 9.4 mW (Typ.), VGS = 10 V, ID = 50 A
* Qg(tot) = 28 nC (Typ.), VGS = 10 V
* Low Miller Charge
* Low Qrr Body Diode
* UIS Capability (Single Pulse and Repetitive Pulse)
* This Device is Pb
* Free, Halide Free and is RoHS Compliant Appl
