Datasheet4U Logo Datasheet4U.com

FDD3690 - N-Channel MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

  • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V.
  • Low gate charge (28nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
  • Fast Switching.
  • High performance trench technology for extremely low RDS(ON).

📥 Download Datasheet

Datasheet preview – FDD3690

Datasheet Details

Part number FDD3690
Manufacturer ON Semiconductor
File Size 179.04 KB
Description N-Channel MOSFET
Datasheet download datasheet FDD3690 Datasheet
Additional preview pages of the FDD3690 datasheet.

📁 Similar Datasheet

  • FDD3690 - 100V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDD3670 - 100V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDD3672 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD3672_F085 - N-Channel UltraFET Trench MOSFET (Fairchild Semiconductor)
  • FDD3680 - 100V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDD3682 - N-Channel MOSFET (Fairchild Semiconductor)
  • FDD3682 - N-Channel MOSFET (INCHANGE)
  • FDD306P - MOSFET (Fairchild Semiconductor)
  • FDD3510H - Dual N&P-Channel MOSFET (Fairchild Semiconductor)
  • FDD3570 - 80V N-Channel PowerTrench MOSFET (Fairchild Semiconductor)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
FDD3690 FDD3690 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. Features • 22 A, 100 V. RDS(ON) = 64 mΩ @ VGS = 10 V RDS(ON) = 71 mΩ @ VGS = 6 V • Low gate charge (28nC typical) These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Published: |