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FDD5614P - P-Channel MOSFET

Description

This 60 V P

POWERTRENCH process.

It has been optimized for power management applications.

Features

  • 15 A,.
  • 60 V.
  • RDS(ON) = 100 mW at VGS =.
  • 10 V.
  • RDS(ON) = 130 mW at VGS =.
  • 4.5 V.
  • Fast Switching Speed.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • High Power and Current Handling Capability.
  • This is a Pb.
  • Free Device.

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Datasheet Details

Part number FDD5614P
Manufacturer onsemi
File Size 266.19 KB
Description P-Channel MOSFET
Datasheet download datasheet FDD5614P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – P-Channel, POWERTRENCH) 60 V FDD5614P General Description This 60 V P−Channel MOSFET uses onsemi’s high voltage POWERTRENCH process. It has been optimized for power management applications. Features • −15 A, −60 V ♦ RDS(ON) = 100 mW at VGS = −10 V ♦ RDS(ON) = 130 mW at VGS = −4.
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