FDD5670

N-Channel Power MOSFET

ON Semiconductor

FDD5670 Features

* 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V RDS(ON) = 18 mΩ @ VGS = 6 V

* Low gate charge

* Fast switching

* High performance trench technology for extremely low RDS(ON) D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD

FDD5670 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. A.

FDD5670 Datasheet (256.07 KB)