FDD5680
FDD5680 is N-Channel Power MOSFET manufactured by onsemi.
Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications
- DC/DC converter
- Motor drives
Features
- 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V
RDS(on) = 0.025 Ω @ VGS = 6 V.
- Low gate charge (33n C typical).
- Fast switching speed.
- High performance trench technology for extremely low RDS(on).
S TO-252
Absolute Maximum Ratings TA=25o C unless otherwise noted
Symbol
VDSS VGSS ID
TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Maximun Drain Current
- Continuous
(Note 1) (Note 1a)
Maximum Drain Current
- Pulsed
Maximum Power Dissipation @ TC = 25o C (Note 1)
TA = 25o C (Note 1a)
TA = 25o C (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC RθJA
Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient
(Note 1) (Note 1b)
Ratings
60 ±20 38 8.5 100 60 2.8 1.3 -55 to +150
2.1...
