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FDD5680 N-Channel Power MOSFET

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Description

FDD5680 March 2015 FDD5680 N-Channel, PowerTrench MOSFET General .
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state res.

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Features

* 38 A, 60 V. RDS(on) = 0.021 Ω @ VGS = 10 V RDS(on) = 0.025 Ω @ VGS = 6 V.
* Low gate charge (33nC typical).
* Fast switching speed.
* High performance trench technology for extremely low RDS(on). D D G G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwi

Applications

* DC/DC converter

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