Datasheet Summary
MOSFET
- P-Channel, POWERTRENCH) Integrated with Schottky Diode
-20 V, -3.1 A, 95 mW
FDFMA2P029Z, FDFMA2P029Z-F106
General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- portable applications. It Features a MOSFET with very low on- state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses.
The MicroFET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
MOSFET
- Max rDS(on) = 95 mW at VGS =
- 4.5 V, ID =
- 3.1 A
- Max rDS(on) = 141 mW at VGS =
- 2.5 V, ID =
-...