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FDFMA2P029Z-F106 - P-Channel MOSFET

Download the FDFMA2P029Z-F106 datasheet PDF. This datasheet also covers the FDFMA2P029Z variant, as both devices belong to the same p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra

portable applications.

Key Features

  • a MOSFET with very low on.
  • state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FDFMA2P029Z-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by onsemi

Part Number Description
FDFMA2P029Z P-Channel MOSFET
FDFS2P106A P-Channel MOSFET and Schottky Diode
FDFS6N548 N-Channel MOSFET and Schottky Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – P-Channel, POWERTRENCH) Integrated with Schottky Diode -20 V, -3.1 A, 95 mW FDFMA2P029Z, FDFMA2P029Z-F106 General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra−portable applications. It features a MOSFET with very low on−state resistance and an independently connected low forward voltage schottky diode allows for minimum conduction losses. The MicroFET t 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features MOSFET • Max rDS(on) = 95 mW at VGS = –4.5 V, ID = –3.1 A • Max rDS(on) = 141 mW at VGS = –2.5 V, ID = –2.5 A • HBM ESD Protection Level > 2.5 kV (Note 1) Schottky • VF < 0.37 V @ 500 mA • Low Profile − 0.