FDMA410NZ - N-Channel MOSFET

ON Semiconductor

FDMA410NZ Datasheet Preview — Preview of FDMA410NZ PDF

Datasheet Details

Part number	FDMA410NZ
Manufacturer	ON Semiconductor ↗
File Size	258.47 KB
Description	N-Channel MOSFET
Datasheet	FDMA410NZ-ONSemiconductor.pdf

FDMA410NZ Product details

Description

This Single N Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.

Features

Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A.
Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A.
Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A.
Max RDS(on) = 50 mW at VGS = 1.5 V, ID = 2.0 A.
HBM ESD Protection Level > 2.5 kV (Note 3).
Low Profile.
0.8 mm Maximum in the New Package MicroFET 2x2 mm.
Free from Halogenated Compounds and Antimony Oxides.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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Published: Dec 19, 2023 |