FDMA410NZ N-Channel MOSFET

ON Semiconductor

Description

DATA SHEET www.onsemi.com MOSFET * Single, N-Channel, POWERTRENCH), 1.5 V Specified 20 V, 9.5 A, 23 mW FDMA410NZ General .
This Single N. Channel MOSFET has been designed using onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.

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Datasheet Specifications

Part number: FDMA410NZ
Manufacturer: ON Semiconductor ↗
File Size: 258.47 KB
Datasheet: FDMA410NZ-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
* Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A
* Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A
* Max RDS(on) = 50 mW at VGS = 1.5 V, ID = 2.0 A
* HBM ESD Protection Level > 2.5 kV (Note 3)
* Low Profi

Applications

* Li
* lon Battery Pack
* Baseband Switch
* Load Switch
* DC
* DC Conversion ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage ±8 V ID Drain Cu

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FDMA410NZ N-Channel MOSFET ON Semiconductor

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