FDMA410NZT N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH), Ultra Thin, 1.5 V 20 V, 9.5 A, 23 mW FDMA410NZT .
This Single N. Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.

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Datasheet Specifications

Part number: FDMA410NZT
Manufacturer: ON Semiconductor ↗
File Size: 419.46 KB
Datasheet: FDMA410NZT-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* our new advanced 0.55 mm max 2 x 2 MLP package technology. Features
* 0.55 mm max package height MicroFET 2 x 2 mm Package
* Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
* Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A
* Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0

Applications

* Li
* lon Battery Pack
* Baseband Switch
* Load Switch
* DC
* DC Conversion
* Mobile Device Switching DATA SHEET www. onsemi. com VDS 20 V RDS(on) MAX 23 mW @ 4.5 V ID MAX 9.5 A Ultra Thin N
* Channel Bottom Drain Contact D1 6D D2 5D

FDMA410NZT Distributors

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FDMA410NZT N-Channel MOSFET ON Semiconductor

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