FDMA410NZ Datasheet (Fairchild Semiconductor)

FDMA410NZ, Single N-channel MOSFET

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe.

Applications * Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S

FDMA410NZ Features

* Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A

* Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A

* Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A

* Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A

* HBM ESD protection level > 2.5 kV (Note 3)

* Low Profi