FDMA410NZ - Single N-channel MOSFET

Fairchild Semiconductor

FDMA410NZ Datasheet Preview — Preview of FDMA410NZ PDF

Datasheet Details

Part number	FDMA410NZ
Manufacturer	Fairchild ↗ Semiconductor
File Size	409.60 KB
Description	Single N-channel MOSFET
Datasheet	FDMA410NZ_FairchildSemiconductor.pdf

FDMA410NZ Product details

Description

This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET leadframe. Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulse

Features

Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A.
Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A.
Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A.
Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A.
HBM ESD protection level > 2.5 kV (Note 3).
Low Profile-0.8 mm maximum in the new package MicroFET 2x2 mm.
RoHS Compliant ® General.

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Published: May 31, 2009 |