FDMA410NZ Single N-channel MOSFET

Fairchild Semiconductor

Description

FDMA410NZ Single N-Channel 1.5 V Specified PowerTrench® MOSFET September 2008 FDMA410NZ www.datasheet4u.com tm Single N-Channel 1.5 V Specified Po.
This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.

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Datasheet Specifications

Part number: FDMA410NZ
Manufacturer: Fairchild Semiconductor
File Size: 409.60 KB
Datasheet: FDMA410NZ_FairchildSemiconductor.pdf
Description: Single N-channel MOSFET

Features

* Max rDS(on) = 23 mΩ at VGS = 4.5 V, ID = 9.5 A
* Max rDS(on) = 29 mΩ at VGS = 2.5 V, ID = 8.0 A
* Max rDS(on) = 36 mΩ at VGS = 1.8 V, ID = 4.0 A
* Max rDS(on) = 50 mΩ at VGS = 1.5 V, ID = 2.0 A
* HBM ESD protection level > 2.5 kV (Note 3)
* Low Profi

Applications

* Li-lon Battery Pack Pin 1 D D G Bottom Drain Contact D D 1 2 3 6 5 4 D D Drain Source G S D D S MicroFET 2X2 (Bottom View) MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuou

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FDMA410NZ Single N-channel MOSFET Fairchild Semiconductor

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