FDMQ8403
Description
This quad MOSFET solution provides ten- fold improvement in power dissipation over diode bridge.
Features
- Max r DS(on) = 110 m W at VGS = 10 V, ID = 3 A
- Max r DS(on) = 175 m W at VGS = 6 V, ID = 2.4 A
- Substantial Efficiency Benefit in PD Solutions
- This Device is Pb- Free, Halid Free and is Ro HS pliant
Applications
- High- Efficiency Bridge Rectifiers
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Value Unit
Drain to Source Voltage
Gate to Source Voltage
±20
Drain Current
- Continuous (Package Limited) TC = 25°C 6
- Continuous (Silicon Limited) TC = 25°C 9
- Continuous (Note 1a.)
TA = 25°C 3.1
- Pulsed
Power Dissipation
TC = 25°C 17
Power Dissipation (Note 1a.)
TA = 25°C 1.9
TJ, TSTG Operating and Storage Junction Temperature
- 55 to °C
Range
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality...
