FDMQ8403
FDMQ8403 is N-Channel MOSFET manufactured by onsemi.
Description
This quad MOSFET solution provides ten- fold improvement in power dissipation over diode bridge.
Features
- Max r DS(on) = 110 m W at VGS = 10 V, ID = 3 A
- Max r DS(on) = 175 m W at VGS = 6 V, ID = 2.4 A
- Substantial Efficiency Benefit in PD Solutions
- This Device is Pb- Free, Halid Free and is Ro HS pliant
Applications
- High- Efficiency Bridge Rectifiers
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Value Unit
Drain to Source Voltage
Gate to Source Voltage
±20
Drain Current
- Continuous (Package Limited) TC = 25°C 6
- Continuous (Silicon Limited) TC = 25°C 9
- Continuous (Note 1a.)
TA = 25°C 3.1
- Pulsed
Power Dissipation
TC = 25°C 17
Power Dissipation (Note 1a.)
TA = 25°C 1.9
TJ, TSTG Operating and Storage Junction Temperature
- 55 to °C
Range
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS...
