FDMQ8403
Description
This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge.
Key Features
- Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A
- Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A
- Substantial Efficiency Benefit in PD Solutions
- This Device is Pb−Free, Halid Free and is RoHS pliant
Applications
- High−Efficiency Bridge Rectifiers
