FDMQ8403 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, POWERTRENCH), GreenBridget Series of High-Efficiency Bridge Rectifiers 100 V, 6 A, 110 mW FDMQ8403 General .
This quad MOSFET solution provides ten. fold improvement in power dissipation over diode bridge. Max rDS(on) = 110 mW at VGS.

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Datasheet Specifications

Part number: FDMQ8403
Manufacturer: ON Semiconductor ↗
File Size: 336.59 KB
Datasheet: FDMQ8403-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A
* Substantial Efficiency Benefit in PD Solutions
* This Device is Pb

Applications

* High
* Efficiency Bridge Rectifiers MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Value Unit VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current A
* Continuous (Package Limited) TC = 25°C 6
* C

FDMQ8403 Distributors

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FDMQ8403 N-Channel MOSFET ON Semiconductor

ON Semiconductor FDMQ8403-like datasheet