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FDMS7620S Datasheet Dual N-Channel MOSFET

Manufacturer: onsemi

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General Description

This device includes two specialized MOSFETs in a unique dual Power 56 package.

It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization.

The low switching loss “High Side” MOSFET is complementory by a low conduction loss “Low Side” SyncFET.

Overview

FDMS7620S Dual N-Channel PowerTrench® MOSFET FDMS7620S Dual N-Channel PowerTrench® MOSFET Q1: 30 V, 13 A, 20.0 mΩ Q2: 30 V, 22 A, 11.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 20.0 mΩ at VGS = 10 V, ID = 10.1 A.
  • Max rDS(on) = 30.0 mΩ at VGS = 4.5 V, ID = 7.5 A Q2: N-Channel.
  • Max rDS(on) = 11.2 mΩ at VGS = 10 V, ID = 12.4 A.
  • Max rDS(on) = 14.2 mΩ at VGS = 4.5 V, ID = 10.9 A.
  • Pinout optimized for simple PCB design.
  • Thermally efficient dual Power 56 Package.
  • RoHS Compliant General.

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