FDMS86163P
Overview
This P-Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- Max rDS(on) = 22 mW at VGS = -10 V, ID = -7.9 A
- Max rDS(on) = 30 mW at VGS = -6 V, ID = -5.9 A
- Very Low RDS-on Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
- This Product is Optimised for Fast Switching Applications As Well As Load Switch Applications
- 100% UIL Tested
- This Device is Pb-Free, Halogen Free/BFR Free and is RoHS Compliant
