FDMS86163P

P-Channel MOSFET

ON Semiconductor

* Max rDS(on) = 22 mW at VGS =

* 10 V, ID =

* 7.9 A

* Max rDS(on) = 30 mW at VGS =

* 6 V, ID =

* 5.9 A

* Very Low RDS

* on Mid Voltage P

* Channel Silicon Technology Optimised for Low Qg

* This Product is Optimised for Fast Swit

FDMS86163P

483.62 KB

P-channel mosfet.

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FDMS86163P P-Channel MOSFET ON Semiconductor

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