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FDMS86163P P-Channel MOSFET

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Description

MOSFET * P-Channel, POWERTRENCH) -100 V, -50 A, 22 mW FDMS86163P General .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

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Features

* Max rDS(on) = 22 mW at VGS =
* 10 V, ID =
* 7.9 A
* Max rDS(on) = 30 mW at VGS =
* 6 V, ID =
* 5.9 A
* Very Low RDS
* on Mid Voltage P
* Channel Silicon Technology Optimised for Low Qg
* This Product is Optimised for Fast Swit

Applications

* As Well As Load Switch Applications
* 100% UIL Tested
* This Device is Pb
* Free, Halogen Free/BFR Free and is RoHS Compliant Applications
* Active Clamp Switch
* Load Switch MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Parameter Symbo

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FDMS86163P-like datasheet